publication order number: ntf3055l175/d ? semiconductor components industries, llc, 2004 february, 2004 ? rev. 2 532 preferred device n ? channel sot ? 223 designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? pb ? free packages are available applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 60 vdc drain ? to ? gate voltage (r gs = 1.0 m ) v dgr 60 vdc gate ? to ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs 15 20 vdc vpk drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? single pulse (t p 10 s) i d i d i dm 2.0 1.2 6.0 adc apk total power dissipation @ t a = 25 c (note 1) total power dissipation @ t a = 25 c (note 2) derate above 25 c p d 2.1 1.3 0.014 w w w/ c operating and storage temperature range t j , t stg ? 55 to 175 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 25 vdc, v gs = 5.0 vdc, i l(pk) = 3.6 a, l = 10 mh, v ds = 60 vdc) e as 65 mj thermal resistance ? junction ? to ? ambient (note 1) ? junction ? to ? ambient (note 2) r ja r ja 72.3 114 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 1 pad size, 1 oz. (cu. area 0.995 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, 2 ? 2.4 oz. (cu. area 0.272 in 2 ). 1 2 3 4 2.0 a, 60 v r ds(on) = 175 m n ? channel sot ? 223 case 318e style 3 lww marking diagram 5l175 5l175 = device code l = location code ww = work week pin assignment 3 2 1 4 http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 536 of this data sheet. ordering information preferred devices are recommended choices for future use and best overall value.
ntf3055l175 http://onsemi.com 533 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? 72.8 74.4 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate ? body leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.7 4.2 2.0 ? vdc mv/ c static drain ? to ? source on ? resistance (note 3) (v gs = 5.0 vdc, i d = 1.0 adc) r ds(on) ? 155 175 m static drain ? to ? source on ? resistance (note 3) (v gs = 5.0 vdc, i d = 2.0 adc) (v gs = 5.0 vdc, i d = 1.0 adc, t j = 150 c) v ds(on) ? 0.32 0.57 0.42 ? vdc forward transconductance (note 3) (v ds = 8.0 vdc, i d = 1.5 adc) g fs ? 3.2 ? mhos dynamic characteristics input capacitance (v 25 vd v 0 v c iss ? 194 270 pf output capacitance (v ds = 25 vdc, v gs = 0 v, f = 1.0 mhz ) c oss ? 70 100 transfer capacitance f = 1 . 0 mhz) c rss ? 29 40 switching characteristics (note 4) turn ? on delay time t d(on) ? 10.2 20 ns rise time (v dd = 30 vdc, i d = 2.0 adc, v gs = 5 0 vdc t r ? 21 40 turn ? off delay time v gs = 5.0 vdc, r g = 9.1 ) (note 3) t d(off) ? 14.3 30 fall time r g 9.1 ) (note 3) t f ? 15.3 30 gate charge (v 48 vd i 2 0 ad q t ? 5.1 10 nc (v ds = 48 vdc, i d = 2.0 adc, v gs = 5.0 vdc ) ( note 3 ) q 1 ? 1.4 ? v gs = 5 . 0 vdc) (note 3) q 2 ? 2.5 ? source ? drain diode characteristics forward on ? voltage (i s = 2.0 adc, v gs = 0 vdc) (i s = 2.0 adc, v gs = 0 vdc, t j = 150 c) (note 3) v sd ? ? 0.84 0.68 1.0 ? vdc reverse recovery time t rr ? 28.3 ? ns (i s = 2.0 adc, v gs = 0 vdc, t a ? 15.6 ? (i s 2.0 adc, v gs 0 vdc, di s /dt = 100 a/ s) (note 3) t b ? 12.7 ? reverse recovery stored charge q rr ? 0.027 ? c 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. switching characteristics are independent of operating junction temperatures.
ntf3055l175 http://onsemi.com 534 0 0.5 2 3.5 2.5 1.5 134 0 0.5 2 3.5 2.5 1.5 134 0.8 2.8 0 3.2 2 0.4 1.2 1.6 2.4 figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus gate ? to ? source voltage figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage v gs, gate ? to ? source voltage (volts) i d, drain current (amps) t j = 25 c t j = 100 c t j = ? 55 c 0.28 0.24 0.2 0.16 0.12 0 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) v gs = 10 v 2 1.8 1.6 1.4 t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) ? 50 50 25 0 ? 25 75 125 100 i d = 1 a v gs = 5 v 0.8 0.6 150 1 10 1000 v ds, drain ? to ? source voltage (volts) i dss , leakage (na) 04060 30 20 10 50 100 0 0.8 2.0 2.8 1.6 0.8 v ds, drain ? to ? source voltage (volts) i d, drain current (amps) 0 0.4 3.2 v gs = 5 v v gs = 2.5 v v gs = 5 v v gs = 3 v 1.6 0.4 1.2 2.0 1 4.2 1.8 3.4 1.4 2.2 2.6 3 3.8 0.08 0.04 1.2 1.2 0.28 0.24 0.2 0.16 0.12 0 0.08 0.04 1 175 v gs = 3.5 v v gs = 4 v t j = 150 c t j = 100 c t j = 25 c t j = 25 c t j = 100 c t j = ? 55 c v ds 10 v v gs = 0 v 2.4 2.8 2.4 t j = 125 c
ntf3055l175 http://onsemi.com 535 10 10 15 5 020 525 r ds(on) limit thermal limit package limit v gs 100 1 0.1 0.001 100 10 1 7 5 4 3 2 1 0 60 20 10 0 2 0 700 500 400 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 300 200 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge v gs , gate ? to ? source voltage (volts) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current v sd , source ? to ? drain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , drain ? to ? source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 05 4 26 1 10 100 0.6 0.72 0.68 0.64 0.84 0.1 10 100 1 25 125 150 100 75 175 50 i d = 2 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1.6 1.2 0.76 0.8 c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 2 a v gs = 5 v v gs = 0 v t j = 25 c i d = 6 a 1 ms 100 s 10 ms dc t r t d(off) t d(on) v ds 0.88 0.01 30 40 50 q 2 q 1 q t 70 0 3 1 0.8 0.4 t f 100 600 6 10 10 s
ntf3055l175 http://onsemi.com 536 100 0.1 100 10 1 0.1 0.001 1000 r(t), effective transient thermal resistance (normalized) t, time (s) figure 13. thermal response 10 1 0.01 0.0001 0.00001 d = 0.5 0.2 0.1 0.05 0.01 single pulse ordering information device package shipping ? ntf3055l175t1 sot ? 223 (to ? 261) 1000 / tape & reel ntf3055l175t1g sot ? 223 (to ? 261) (pb ? free) 1000 / tape & reel ntf3055l175t3 sot ? 223 (to ? 261) 4000 / tape & reel ntf3055l175t3g sot ? 223 (to ? 261) (pb ? free) 4000 / tape & reel ntf3055l175t3lf sot ? 223 (to ? 261) 4000 / tape & reel NTF3055L175T3LFG sot ? 223 (to ? 261) (pb ? free) 4000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
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